Evaluation of Different Diode Technologies in a Si-SiC Hybrid Switch Used in a 540V/30kVA Inverter
Konferenz: CIPS 2024 - 13th International Conference on Integrated Power Electronics Systems
12.03.2024-14.03.2024 in Düsseldorf, Germany
Tagungsband: ETG-Fb. 173: CIPS 2024
Seiten: 7Sprache: EnglischTyp: PDF
Autoren:
Andrade, Marco; Cougo, Bernardo; Sathler, Gustavo (IRT Saint Exupery, Toulouse, France)
Morais, Lenin M F (Electronic Engineering Department of Federal University of Minas Gerais, Belo Horizonte, Brazil)
Inhalt:
This work evaluates a Si-SiC hybrid switch consisting of a silicon IGBT and a silicon carbide MOSFET in parallel as well as an optional diode. The focus is to evaluate the utilization or not of a discrete diode in the hybrid switch. This work considers the use of two diode technologies: silicon fast recovery diode, and silicon carbide schottky barrier diode. Switching energy of the Hybrid Switch with each diode technology is evaluated using double pulse test. Losses in a 540 V/ 30 kVA inverter using the Hybrid Switch are calculated to evaluate and compare the technologies.