Adaptive Dead Time Control for GaN HEMTs Based on a Time- Discrete Extremum-Seeking System

Inhalt:
Resonant switching operation of power semiconductors has become more and more critical in order to increase the efficiency of power electronics. This paper presents a robust method for dead-time adaption based on an extremum-seeking system leaving no residual error. For half-bridge topologies this system can rely solely on the parasitic capacitances and the load inductance for relievable operating points. Utilizing this method, switching losses were reduced by 26% for the test setup. Additionally losses of a GaN half-bridge are characterized based on dead-time.