Online Junction Temperature Estimation Based on the Drain Current Rising Edge for SiC MOSFETs

Inhalt:
Precision in estimating junction temperature is vital for assessing reliability and maintaining the health of silicon carbide (SiC) MOSFETs. This study introduces an innovative approach for accurately estimating junction temperature during actual operating conditions by utilizing the period between the rising edge of the gate PWM signal and the end of the drain current rising as a temperature-sensitive electrical parameter (TSEP). Experimental findings highlight the method's high sensitivity and robust immunity to interference. Moreover, it boasts a straightforward circuit design, cost-effectiveness, and broad compatibility, facilitating seamless integration with commercial gate drivers. This, in turn, enhances the intelligence of gate driver systems.