Investigation of TSEPs for junction temperature estimation of GaN and SiC devices in power cycling tests

Inhalt:
The sensitivities of six temperature sensitive electrical parameters (TSEPs), including RDS(on), VGS(th), IGSS, VGS, IDSS, and VSD, of three gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with Schottky gate, one GaN gate injection transistor (GIT) with ohmic gate, and two silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated. The suitability of these TSEPs for the junction temperature estimation in power cycling (PC) tests is evaluated. The findings can serve as a guide for choosing the most suitable TSEPs for a universal PC test bench for both GaN and SiC devices.