Single Supply High Voltage Module with no Auxiliary Bootstrap Network

Inhalt:
In this paper, the design and the experimental characterization of a single supply high voltage Intelligent Power Module (IPM) with integrated bootstrap supply network are presented. The proposed IPM is based on CoolMOS (TM) Super Junction (SJ) power MOSFETs, a high voltage half-bridge (HB) gate driver and a silicon capacitor co-packaged in a 8x9 mm² QFN package. The IPM has been tested in real application conditions and the results have shown that the integrated bootstrap circuit is correctly supplying the high-side part of the gate driver. A comparison with an identical device, but with an external bootstrap capacitance, is also presented.