Double-sided measurement of defect density on through-structured wafers before wafer level bonding
Konferenz: MikroSystemTechnik Kongress 2023 - Kongress
23.10.2023-25.10.2023 in Dresden, Deutschland
Tagungsband: MikroSystemTechnik Kongress 2023
Seiten: 4Sprache: EnglischTyp: PDF
Autoren:
Langa, Sergiu; Bornhorst, Kirstin; Urban, Marco; Scharnweber, Michael; Doleschal, Wolfgang; Rieck, Andreas; Tille, Christian; Weise, Juliane; Kaiser, Bert (Fraunhofer IPMS, Dresden, Germany)
Inhalt:
In this paper we present a method for double-sided measurement of defect density on through-structured 200 mm silicon wafers. The detection of the defects is carried out using a standard microscope in the dark-field mode, using a wafer-edge handling system. An automatic pattern recognition locates and quantifies the defects based on the acquired images.