Towards Heterogeneous Integration of InP on Si via Micro Transfer Printing by direct adhesion

Inhalt:
Heterogeneous integration of group III-V semiconductor on silicon is demonstrated using micro-transfer printing (muTP) without an adhesion layer. The source is a multi-layer stack of Group III-V materials, whereas the target is an SOI wafer covered with oxide. The surface is activated by plasma treatment to enable direct adhesion. After that, micro-transfer printing of the source on the target wafer is done using a PDMS stamp. Various possible printing errors were considered, like tilting one end of the coupon with respect to the other and shifting the whole coupon in a vertical direction, which has to be adjusted to enable the correct printing alignment. This becomes even more essential from the photonics application point of view, where coupon alignment at the correct position is essential for device functionality. We demonstrate a local yield of around 90% in our printing and also depict minimizing deviations in printing position significantly (dx = 0.1 µm, dy = 0)