Simulation and evaluation of resonant magnetoelectric sensors based on TiN/AlN/Ni thin films

Inhalt:
Magnetoelectric sensors are a promising application for the measurement of smallest magnetic fields at room temperature. A FEM model for MEMS based δ E-effect sensors is presented consisting of titanium nitride (TiN), aluminium nitride (AlN) and nickel (Ni) as a three layer laminate within this device concept. On basis of the multiphysical model, existing measurement data can be reproduced very well. Design rules for optimizing the geometric dimensions of a sensor structure are determined from different parameter studies. As a result, magnetoelectric coefficients of 223.4 V/(cmOe) for cantilever and 89.2 V/(cmOe) for beam structures are achieved. A peak sensitivity of 3 T^-1 can be determined for the cantilever based δ E-effect sensor.