An Embedded Power Section with GaN HEMTs
Konferenz: CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems
15.03.2022 - 17.03.2022 in Berlin, Germany
Tagungsband: ETG-Fb. 165: CIPS 2022
Seiten: 7Sprache: EnglischTyp: PDF
Autoren:
Li, Tianyu; Lindemann, Andreas (Otto von Guericke University Magdeburg, Magdeburg, Germany)
Voigt, Christian; Erhardt, Eugen (Technical University of Berlin, Berlin, Germany)
Boettcher, Lars (Fraunhofer Institute for Reliability and Microintegration(IZM), Berlin, Germany)
Inhalt:
This paper investigates the option to use the printed circuit board embedding technology for commercial 650V GaN-on-Si power devices. Embedding the power section, including the phase-leg of transistors, control circuitry like driver ICs and the dc-link capacitor is a promising approach to realize a low inductive and high power density system. The necessary methods and processes as well as the design of a power section using GaN HEMTs for a three-phase drive inverter with a nominal power in the low kW range in an embedded and a conventional assembly are discussed and the electrical characteristics are studied in hard-switched mode.