Comparison of Different Methods for the Characterization of Online Junction Temperature of a Gallium-Nitride Power Transistor

Inhalt:
This paper presents a comparison of different temperature measurement methods for the junction temperature of a GaN-on-Si power transistor. The temperature measurement methods considered in this paper are an infrared sensor, a monolithically integrated on-chip thermistor, and a temperature-sensitive electrical parameter (TSEP). The measurements are performed on a normally-on 600 V gallium nitride power transistor with an isolated monolithically integrated thermistor with a positive temperature coefficient and a commercially available infrared sensor with an output resolution of 0.01 °C. The quasi-threshold voltage is used as the selected TSEP because of its independent behavior from other electrical parameters of the transistor. The implemented TSEP measurement method is dynamically faster and more accurate than the infrared sensor and monolithically integrated temperature detector.