PCB-Embedded Packaging for Ultra-Fast Switching of SiC MOSFETs

Inhalt:
In high-voltage applications requiring very fast switching transients, as for example nanosecond pulse applications, SiC MOSFETs are an interesting switch technology due to their superior switching performance and relatively high breakdown voltage. However, conventional packages relying on bond wires need to be replaced by planar packages to reduce the stray inductances and to exploit the full switching speed potential of SiC MOSFETs. This paper compares a low-inductive PCB-package to a standard wire-bonded package in terms of package inductances, achievable switching speed, and thermal management.