Switching Loss Model for a GaN-HEMT based 3L-ANPC Drive System using a SynRM

Konferenz: Elektromechanische Antriebssysteme – Electromechanical Drive Systems 2021 - ETG-Fachtagung
09.11.2021 - 10.11.2021 in Online

Tagungsband: ETG-Fb. 164: Elektromechanische Antriebssysteme 2021

Seiten: 6Sprache: EnglischTyp: PDF

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Autoren:
Geppert, Martin; Schroeder, Guenter (University of Siegen, Siegen, Germany)

Inhalt:
This paper presents a Matlab Simulink model for estimating the losses of a drive system based on a Gallium Nitride (GaN) 3-Level Active Neutral Point Clamped Converter (ANPC). Firstly, the turn on and off losses of a single GaN HEMT are measured for different current, voltage and temperature values, using a double pulse test fixture. These evaluated losses are used to create a Matlab Simulink loss model of a single switch and finally a model of the 3L-ANPC. Subsequently the impact of different Modulation strategies and switching frequencies on the efficiency of the converter is investigated. Finally an experimental setup of the ANPC using GaN HEMTs and the control system, which is implemented on a Zed-board (FPGA) is presented. The results of simulation and experimental measurements of a speed controlled SynRM drive are compared and the model is validated.