Dielectric Properties of Plasma Oxides for Microfabricated Ion Traps
Konferenz: MikroSystemTechnik Kongress 2021 - Kongress
08.11.2021 - 10.11.2021 in Stuttgart-Ludwigsburg, Deutschland
Tagungsband: MikroSystemTechnik Kongress 2021
Seiten: 2Sprache: EnglischTyp: PDF
Autoren:
Zesar, Alexander; Sieberer, Michael (Infineon Technologies Austria AG, Villach, Austria & Graz University of Technology, Graz, Austria)
Schoenherr, Helmut; Seebacher, David; Roessler, Clemens; Schueppert, Klemens; Aschauer, Elmar (Infineon Technologies Austria AG, Villach, Austria)
Hadley, Peter (Graz University of Technology, Graz, Austria)
Inhalt:
Microfabricated ion traps are a key technology for trapped ion quantum computing. In chip-based ion traps metal layers are isolated by plasma enhanced chemical vapor deposited (PECVD) dielectrics. Both dielectric losses and charging currents of parasitic capacitances lead to power dissipation, which has adversely effects trap performance and, therefore, limits scaling. The presented work investigates properties of dielectric materials in order to develop strategies for minimizing the total heat dissipation.