Highly Integrated Switching Cell Design based on Copper Diamond Heat Spreader, 3D Printed Heat Sink and HTCC Logic Board
Konferenz: CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems
24.03.2020 - 26.03.2020 in Berlin, Deutschland
Tagungsband: ETG-Fb. 161: CIPS 2020
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Sewergin, Alexander; De Doncker, Rik W. (Institute for Power Electronics and Electrical Drives (ISEA), RWTH Aachen University, Germany)
Rittner, Martin; Burghardt, Andreas (Robert Bosch GmbH, Renningen, Germany)
Kriegel, Kai; Mitic, Gerhard (Siemens AG, München, Germany)
Zetterer, Thomas (Schott AG, Landshut, Germany)
Hutsch, Thomas (Fraunhofer Institute for Manufacturing Technology and Advanced Materials IFAM, Dresden, Germany)
Neumann, Albert (Austerlitz Electronic GmbH, Nürnberg, Germany)
Simon, Flaviu (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen, Germany)
Inhalt:
This paper introduces a new switching cell design approach. While state-of-the-art power modules utilize bond wires and DBC-substrate, the proposed switching cell design focuses upon the elimination of bond wires in the power-loop by using a high temperature co-fired ceramics (HTCC) board. Moreover, the coefficients of thermal expansion (CTE) of the SiC-MOSFETs and the copper heat-sink are adapted through integrated copper-diamond (Cu-C) buffer layers.