Highly integrated SiC module with thick-film dielectric allows for high frequency operation

Inhalt:
This paper encompasses the design, manufacture and static electrical characterisation of a full-SiC 1200 V half-bridge module with integrated gate drivers and DC-link capacitors. The module is based on copper thick-film (CTF) on a 850 mm² AL2O3 substrate. At a heat-sink temperature of 80 °C, the module can carry a continuous current of 25 A. CTF supports the implementation of fine-pitch SMD components while the use of conventional Al wire bond interconnects keeps the costs low. Combined, CTF and wire bonding could represent the next generation of fast-switching power modules. Simulations revealed that by integrating a 600 nF DC-link capacitance on the substrate, the total parasitic inductance of the power loop is reduced down to 1.4 nH at 1 MHz.