Slurry Development for Copper/Barrier CMP
Konferenz: ICPT 2012 - International Conference on Planarization / CMP Technology
15.10.2012-17.10.2012 in Grenoble, France
Tagungsband: ICPT 2012
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Zhang, Baoguo; Liu, Yuling (I:vficroelectronics Institute, Hebei University of Technology, Tianjin, 300130, China)
Inhalt:
Hebei University of Technology (abbreviated as HEBUT) has developed Cu/barrier CMP slurries for about two decades. Two slurries have been formulated for Cu CMP: (1) FA/O I and (2) FA/O II. Both of them are colloidal silica based alkaline slurries. In FA/O I, there is alkali additive of R(NH2)(OH) as the complex agent. In FA/O II, there is also an alkali additive of R(NH2)2 as the complex agent. The pH of FA/O II is higher than that of FA/O I, however. FA/O I slurry can be directly used for barrier polish, and it can also be used for 2nd step Cu CMP after a certain amount of H2O2 is mixed. F A/O II slurry can be used for 1st step Cu CMP with addition of H2O2.