Chemical Mechanical Polishing Slurry for Aluminum Substrate
Konferenz: ICPT 2012 - International Conference on Planarization / CMP Technology
15.10.2012-17.10.2012 in Grenoble, France
Tagungsband: ICPT 2012
Seiten: 3Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Wang, Liangyong; Liu, Weili; Song, Zhitang (Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, PR China )
Inhalt:
Aluminum substrate is widely used for the applications of cell phones, tablets and so on. To meet the stringent requirement of surface quality, chemical mechanical polishing (CMP) slurry is needed for processing aluminum substrate. However, imperfections like scratches, projections, contaminations, pits, can easily occur during Al CMP. In this study, we optimized our slurry and achieved Al CMP with minimized imperfections. Keywords: chemical mechanical polishing, aluminum substrate, slurry