Structural characterisation of GaP/Si nanolayers
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Guo, W.; Thanh, T. Nguyen; Létoublon, A.; Cornet, C.; Bondi, A.; Rohel, T.; Bertru, N.; Robert, C.; Durand, O.; Corre, A. Le (Université Européenne de Bretagne, INSA, FOTON, UMR 6082, 5708 Rennes, France)
Elias, G.; Ponchet, A. (CEMES, UPR CNRS 8011,31055 Toulouse, France)
Micha, J. S. (UMR SPrAM 5819 CNRS-CEA-UJF, INAC, 38054 Grenoble, France)
Inhalt:
Growth of GaP (III-V semiconductor) directly deposited on Si has been proposed to overcome the problems of lattice mismatch, in the context of monolithic integration of photonics on silicon. However, long-term stable device performance implies reproducible achievement of defect-free interfaces between III-V and Si. Among them, antiphase domains (APD) and microtwins (MT) are quite difficult to avoid. And characterization means sensitive to these defects must employed for optimization of the growth pocess and qualification of the grown layers. Lab setup and synchrotron XRD is combined with TEM and AFM observations.