Strain Effects on Performance of AlGaInAs/InP Single Quantum Well Lasers
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Sapkota, Durga Prasad; Kayastha, Madhu Sudan; Wakita, Koichi (Chubu University, Kasugai, Aichi 487-8501, Japan)
Inhalt:
We have studied the effects of compressive and tensile strain of single quantum well lasers on differential gain, transparency carriers density and threshold current density. Aluminum composition is adjusted at 0.07 and 0.09 for compressive and tensile strain respectively. In both compressive and tensile strain quantum well, the minimum threshold current density was achieved at 1.5% strain as 110 Acm-2 and 125 Acm-2 respectively, with a cavity length of 400 µm.