IPRM 2011
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Weak Emitter-Size Effect in InP/In0.37Ga0.63As0.89Sb0.11/In0.53Ga0.47As Double Heterojunction Bipolar Transistors

Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany

Tagungsband: IPRM 2011

Seiten: 4Sprache: EnglischTyp: PDF

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Autoren:
Chang, Che-An; Chen, Shu-Han; Wang, Sheng-Yu; Chang, Chao-Min; Chyi, Jen-Inn (Department of Electrical Engineering, National Central University, Jhongli, Taiwan, ROC)
Chen, Shu-Han; Chyi, Jen-Inn (Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan, ROC)
Chyi, Jen-Inn (Department of Optics and Photonics, National Central University, Jhongli, Taiwan, ROC)

Inhalt:
This study shows that the current gain of InGaAsSb base DHBTs is less sensitive to the emitter size and collector current density (JC) due to their low surface recombination. The deduced emitter periphery surface recombination current (KB,surf) of type-I InP/In0.37Ga0.63As0.89Sb0.11 HBTs is 1.57×10-5 muA/µm at JC = 0.1 A/cm2, which is twenty times lower than that of the conventional InP/InGaAs SHBTs. The results manifest the great potential of InGaAsSb base for aggressively scaled THz HBTs.