1550 nm Flip-Chip Compatible Electroabsorption-Modulated Laser with 40 Gb/s modulation capability
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Kreissl, Jochen; Bornholdt, Carsten; Gaertner, Tom; Moerl, Ludwig; Przyrembel, Georges; Rehbein, Wolfgang (Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut, Einsteinufer 37, 10587 Berlin, Germany)
Inhalt:
1.55micrometer electroabsorption-modulated laser (EML) devices designed for flip-chip mounting have been developed including a DFB laser, a butt joint coupled electroabsorption modulator (EAM), and a spot-size expander. Flip-chip mounting enables array-like arrangements of individually optimized discrete chips to be placed on optical PLC platforms like Silicon-on-Insulator (SOI) boards. The EMLs are based on the conventional InP/InGaAsP material system and rely on a buried heterostructure with Fe doped InP blocking. Large signal modulation at 25 Gb/s and 40Gb/s with high extinction ratio is demonstrated.