MOVPE preparation and in situ spectroscopy of Si(100) substrates for III-V heteroepitaxy
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Bruckner, Sebastian; Döscher, Henning; Dobrich, Anja; Supplie, Oliver; Kleinschmidt, Peter; Hannappel, Thomas (Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany)
Inhalt:
We studied the atomic surface properties of Si(100) during preparation in a metal-organic vapour phase epitaxy reactor and the impact of the hydrogen ambient. Fourier-transform infrared spectroscopy directly proved monohydride termination of the Si surface after VPE preparation. In situ reflectance anisotropy spectroscopy showed the absence of Si-H bonds at elevated annealing temperature, while at room temperature the characteristic spectrum of the hydrogen terminated surface was obtained. During cooling the in situ measurements enabled the observation of the transition between the clean and the H-terminated surface.