The optoelectronic performance of axial and radial GaAs nanowire pn-diodes
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 3Sprache: EnglischTyp: PDF
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Autoren:
Lysov, A.; Gutsche, C.; Offer, M.; Regolin, I.; Prost, W.; Tegude, F.-J. (Center for Nanointegration, University of Duisburg-Essen, Duisburg, Germany)
Inhalt:
Axial and radial core-multi-shell GaAs nanowire pn-diodes have been fabricated via MOVPE epitaxy. Nanowire diodes show macroscopic diode-like IV-characteristics. Ultra-low reverse current giving rise to an on/off ratio of about 106 was measured for axial pn-junctions. Radial nanowire-diodes demonstrated significantly higher photocurrents in comparison with axial nanowire geometry. Spatially resolved photocurrent spectroscopy was used to investigate mechanism of carrier photo generation. Optical generation of carriers at the pn-junction is shown to dominate the photo response. The fill factors of 73% for axial and 57% for radial pn-diodes were measured at room temperature under monochromatic illumination (λ = 532 nm) and scale with the illumination intensity in a wide intensity range.