Structural evaluation of GaAs1-xBix mixed crystals by TEM
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Ueda, Osamu; Ikenaga, Noriaki (Kanazawa Institute of Technology, 1-3-4 Atago Minato-ku, Tokyo 105-0002, Japan)
Tominaga, Yoriko; Yoshimoto, Masahiro; Oe, Kunishige (Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, Japan)
Inhalt:
GaAs1-xBix/GaAs multiple quantum well (MQW) structures and GaAs1-xBix thin films (x< 0.109) grown on (001) GaAs substrates by molecular beam epitaxy have been structurally evaluated by transmission electron microscopy. In both cases, grown-in defects such as dislocations, dislocation loops, and precipitates, composition modulated structure, and ordered structure were not observed all. From these results, it is expected that these materials are very promising for achieving high performance of MQW lasers emitting in the long wavelength range.