InAs/InGaAsP Quantum Dots Emitting at 1.5 µm for Applications in Lasers
Konferenz: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
22.05.2011 - 26.05.2011 in Berlin, Germany
Tagungsband: IPRM 2011
Seiten: 4Sprache: EnglischTyp: PDF
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Autoren:
Semenova, E. S.; Kulkova, I. V.; Kadkhodazadeh, S.; Schubert, M.; Yvind, K. (DTU Fotonik, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark)
Kadkhodazadeh, S.; Dunin-Borkowski, R. E. (DTU Center for Electron Nanoscopy, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark)
Inhalt:
In this work the epitaxial growth of InAs quantum dots (QDs) in an InGaAsP matrix on an InP wafer is described. A new approach to shift the emission wavelength to the 1.5micrometer region using deposition of a thin GaAs capping layer on top of the QDs is suggested and exploited. Laser structures based on 5 layers of such dots as the gain material demonstrate lasing in continuous wave regime at 1.5 µm wavelength at room temperature.