Silicon Lateral Avalanche Photodiodes Fabricated by Standard 0.18 µm CMOS Process
Konferenz: ECOC 2009 - 35th European Conference on Optical Communication
20.09.2009 - 24.09.2009 in Vienna, Austria
Tagungsband: ECOC 2009
Seiten: 2Sprache: EnglischTyp: PDF
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Autoren:
Iiyama, Koichi; Takamatsu, Hideki; Maruyama, Takeo (School of Electrical and Computer Engineering, Kanazawa University, Japan)
Inhalt:
A Si APD was fabricated by standard 0.18 µm CMOS process. The maximum avalanche gain was 224 for only 8 V bias. The bandwidth was 1.6 GHz for low avalanche gain and 800 MHz for large avalanche gain.