Analysis of STI Thin-SOI LDMOS transistors for Smart Power and high frequency applications
Konferenz: CIPS 2008 - 5th International Conference on Integrated Power Electronics Systems
11.03.2008 - 13.03.2008 in Nuremberg, Germany
Tagungsband: CIPS 2008
Seiten: 5Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Cortes, I.; Fernandez-Martinez, P.; Flores, D.; Hidalgo, S.; Rebollo, J. (Centro Nacional de Microelectrónica (CNM-CSIC), 08193 Campus UAB. Bellaterra, Barcelona, Spain)
Inhalt:
This paper is addressed to the study of 80V STILDMOS transistors in a Thin-SOI technology by means of 2D numerical simulations. Extensive 2D numerical simulation results allow to compare the electrical performance of the proposed novel STI LDMOS structure with that of a conventional LDMOS in terms of breakdown voltage, specific on-resistance, transconductance (gm), and cut-off frequency (fT). Moreover, the impact of the STI length (LSTI) and the N-drift implantation energy on the electrical characteristics are considered in detail. The benefits of applying the STI concept to higher voltage Thin-SOI LDMOS (in the range of 80V) is analysed in this paper.