IEC 63284:2022
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
Ausgabedatum:
2022-04
Edition:
1.0
Sprache: EN-FR - zweisprachig englisch/französisch
Seitenzahl: 25 VDE-Artnr.: 250839
IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress