Transient Measurement Setup for the Output Characteristics with Focus on the Ohmic Region for Si-MOSFETs and GaN-HEMTs

Abstract:
A method of measuring the output characteristics of Si-MOSFETs and GaN-HEMTs is described. In order to precisely predict the conduction losses of a semiconductor in a switched mode power supply, an exact description of the ohmic region of the output characteristics is necessary beyond the data published by the manufacturer. The paper describes the proposed method in detail. Experimental results show a good agreement of the idea presented in this paper with the data sheet. Furthermore, application-relevant aspects, like temperature, can be measured with the setup, leading to an accurate prediction of the conduction losses. Measurement results are shown for a conventional Si- MOSFET as well as a low-voltage GaN-HEMT.