The third generation SiC MOSFET with low on-state resistance and ultra-high reliability
Conference: PCIM Asia 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
08/28/2024 - 08/30/2024 at Shenzhen, China
doi:10.30420/566414073
Proceedings: PCIM Asia 2024
Pages: 4Language: englishTyp: PDF
Authors:
Wang, Pengxiang; Li, Chengzhan; Yao, Yao; Wang, Yafei; Ding, Jieqin; Luo, Haihui
Abstract:
In this paper, we introduce the new generation of 1200V fine planar-gate SiC MOSFET,which has excellent low specific resistance of 2.7 milliohm*cm2 by adjusting the cell structure and low switching loss by optimizing the radio of Ciss/Cgd. Furthermore, the device has also demonstrated ultra-high reliability with narrower termination compared with last generation planar-gate SiC MOSFET, as shown by no failures after stressing at +23/-10V HTGB test for 1000 hours at 175 °Celsius or 1300V HTRB test for 1000 hours at 175 °Celsius.