Accurate Characterization of the Gate Charge for SiC MOSFETs based on Double Pulse Test Scheme
Conference: PCIM Asia 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
08/28/2024 - 08/30/2024 at Shenzhen, China
doi:10.30420/566414041
Proceedings: PCIM Asia 2024
Pages: 5Language: englishTyp: PDF
Authors:
Qian, Chenghui; Liu, Hongyao; Mao, Saijun
Abstract:
The aim of this paper is to analyze the accurate gate charge characterization method of SiC MOSFETs based on the double pulse test scheme. This paper starts with four test methods for the gate charge of SiC MOFESTs including the operation principle and their influence on the obtained Vgs-Qg curve. Experimental results are given to validate the theoretical analysis. By comparison, it is concluded that the double pulse test method is most suitable for the precise measurement of gate charge for SiC MOSFETs.