3.3 kV SBD-Embedded SiC-MOSFET module for railway applications
Conference: PCIM Asia 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
08/28/2024 - 08/30/2024 at Shenzhen, China
doi:10.30420/566414040
Proceedings: PCIM Asia 2024
Pages: 8Language: englishTyp: PDF
Authors:
Yosho, Daichi; Hironaka, Yoichi; Okimoto, Shigeru; Sun, Jian; Hatori, Kenji
Abstract:
We have developed a new 3.3kV Schottky-barrier-diode-embedded (SBD-Embedded) silicon-carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) module that fulfills the high-reliability, high-power, and high-efficiency requirements of railway applications. It avoids the bipolar degradation inherent to SiC-MOSFET by embedding the SBD into the MOSFET. It also achieves sufficient surge current capability through the introduction of a novel structure, the bipolar mode activation (BMA) cell. When compared to the conventional SiC module, the electrical characteristics show a significant improvement, with a 58% reduction in switching losses. Furthermore, the thermal resistance is reduced by 35% in the MOSFET part and 63% in the free-wheeling diode part. Consequently, the output current for inverters is markedly enhanced.