The effect of the bonded interface damage on mechanical and electro-thermal characteristics of the IGBT Modules

Abstract:
For insulated gate bipolar transistor (IGBT) modules using wire bonding as the interconnection method, the primary failure mechanism is the cracking of the bonded interface. Studying the effect of the bonded interface damage on mechanical and electro-thermal characteristics is crucial for assessing the reliability of IGBT modules. This paper established these finite element models of IGBT modules with different bonded areas and conducted a two-step indirect coupling electro-thermal-mechanical analysis under power cycling. The analysis results show that the cur-rent density and the displacement of boding wires significantly increase with the increase of bonded interface damage.