New Developed 4.5KV/1.5KA IGBT Module based on TMOS IGBT and PIC FRD Technology
Conference: PCIM Asia 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
08/28/2024 - 08/30/2024 at Shenzhen, China
doi:10.30420/566414022
Proceedings: PCIM Asia 2024
Pages: 4Language: englishTyp: PDF
Authors:
Wang, Bin; Zhu, Liheng; Xu, Jiacheng; Chen, Xing; Wang, Mengjie; Lui, Pengfei; Qin, Rongzhen; Xiao, Qiang; Lou, Haihui
Abstract:
In this paper, a new 4500V/1500A IGBT module based on TMOS IGBT and PIC FRD technology is proposed. Compared to the last generation module, the new module demonstrates a significant reduction in conduction saturation voltage, diode forward voltage and reverse recovery energy. Furthermore, the module enhanced short circuit and reverse blocking capability. The peak reverse recovery power reaches 18MW, featuring RRSOA robustness. The module has passed 150 degrees Celcius 1000 hours 3600V HTRB test, exhibiting long term reliability.