SPICE Modeling and Experimental Validation of the Active Short Circuit (ASC) Test with Silicon Carbide Power MOSFETs
Conference: PCIM Asia 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
08/28/2024 - 08/30/2024 at Shenzhen, China
doi:10.30420/566414017
Proceedings: PCIM Asia 2024
Pages: 4Language: englishTyp: PDF
Authors:
Raffa, Alessandra; Veneziano, Pier Paolo; Amata, Benedetto; Brugaletta, Carlo; Messina, Paolo; Papaserio, Marco; Lanzafame, Antonia
Abstract:
A new SPICE model for SiC MOSFETs to be used in ASC test simulations has been developed. This model accurately reproduces the behavior of the device at extreme conditions, such as high temperature, high current, and high drain-source voltage, typical for this kind of test. The ASC test has been simulated and the results have been compared with experimental measurements to validate the methodology.