Optimizing Turn-off Controllability of Micropattern Trench IGBTs for 900 A ED Type Modules

Abstract:
Low voltage trench isolated gate bipolar transistors (trench IGBTs), ranging from voltages of 750 V to 1700 V, are widely used in power electronics applications such as e-mobility, industrial and renewable energy. For the optimization of the power device, the chip must be designed according to the target application, each of which presents their own requirements regarding the switching frequency, power factor, stray inductance, and modulation strategy. This presents a significant challenge since the device is expected to perform well for different applications. In this paper, an in-depth analysis of the effects of various design parameters on the IGBTs performance is demonstrated with experimental data. Finally, a conclusion is drawn on how to achieve the most optimized device design for a given application. Optimized solutions for a widely used package type (ED type) with state-of-the-art current density are presented.