Performance Evaluation of IGBT4 and IGBT7 in Servo Drive Design
Conference: PCIM Asia 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
08/28/2024 - 08/30/2024 at Shenzhen, China
doi:10.30420/566414010
Proceedings: PCIM Asia 2024
Pages: 5Language: englishTyp: PDF
Authors:
Zhao, Jia; Su, Jianzhong; Liu, Zuange
Abstract:
IGBT (Insulated Gate Bipolar Transistor) is the key device of servo drive. IGBT type selection and losses is directly related to the system performance, cost, and size. As the latest generation IGBT technology platform of Infineon, IGBT7 has the characteristics of ultra-low conduction voltage drop, dv/dt controllable and 175℃ overload junction temperature. Through the test of FP35R12W2T4 and FP35R12W2T7 in the same platform servo drive, the junction temperature comparison of IGBT4 and IGBT7 under the same working conditions is obtained. The experimental results show that the junction temperature of IGBT7 is lower than that of IGBT4 in the comparison continuous high-power load condition and inertia disk load condition.