Parameter Extraction for an ANN-assisted IGBT Model in Transient Simulations
Conference: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/11/2024 - 06/13/2024 at Nürnberg, Germany
doi:10.30420/566262412
Proceedings: PCIM Europe 2024
Pages: 8Language: englishTyp: PDF
Authors:
Zhang, Huaiyuan; Shih, Abby; Haensel, Stefan; Umar, Zeeshan; Lee, Steven; Zeyss, Felix
Abstract:
The development of power IGBT devices require an accurate transient model over multiple currents and voltages. With the Artificial Neural Network (ANN) assisted diode model and the modified Angelov-based capacitance model, a new IGBT model describes both the overshoot of collector current and collectoremitter tail voltage at different bias conditions. Given a completed parameter extraction workflow, a comprehensive good fitting of the transient current and voltage waveforms is verified at both the turn-on and turn-off process for currents from 30 to 600 A and voltages from 100 to 820 V.