Radiation Hardness of SiC Based Inverters Based on an EV Mission Profile
Conference: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/11/2024 - 06/13/2024 at Nürnberg, Germany
doi:10.30420/566262389
Proceedings: PCIM Europe 2024
Pages: 6Language: englishTyp: PDF
Authors:
Syed, Hadiuzzaman; Schwaiger, Stephan; Goel, Sudhanshu; Martinez-Limia, Alberto; Heyers, Klaus
Abstract:
Cosmic radiation (CR) ruggedness is one of the main design features of the SiC MOSFETs used in the EV inverters. Over its entire lifetime the EV inverter is exposed to cosmic radiation and prone to single-event-burnout failures. The rate of failure or CR FIT (failure in time) is a commonly agreed parameter that defines the radiation ruggedness of the SiC. CR FIT rate is also dependent on the mission profile that is particular to a certain inverter application. Experimental results combined with the application specific mission profile eases the design for a SiC technology optimized for the use in the real-life scenarios.