ISO247: High Performance Ceramic based Advanced Isolated Discrete Package to Fully Exploit the Advantages of SiC MOSFET

Abstract:
In power electronic applications, achieving electrical isolation between a discrete semiconductor package and the heatsink often results in an increase in the thermal resistance junction-to-heatsink RthJH, limiting the current carrying capacity of the packaged device. Littelfuse's innovative isolated discrete ISO247 package directly addresses this issue. The ISO247 with high performance ceramic enhances power and current density while providing inherent isolation and remaining footprint compatible with standard TO-247 package. This paper compares ISO247 and TO-247 devices carrying the same 1200 V SiC MOSFET. Thermal resistance, junction temperature and power handling capability are analyzed to demonstrate the superiority of the ISO247 package for SiC power devices. Thermal measurements indicate that selecting the ISO247 is optimal for minimizing chip junction temperature and thermal resistance junction-to-heatsink, potentially leading to increased application power output and cost savings at the system-level.