Contributions for Building Blocks for Normally-off 650V GaN-on-Si Power Integrated Circuits

Abstract:
To increase power density, reliability and easy use, different circuits can be integrated in the same GaN-on-Si 650V die for power management. Input compatibility circuit and UVLO (undervoltage lockout) are essential circuits needed when integrating gate driver with a power transistor in the same die. This paper presents the characterization measurements of an UVLO and two different designs for input compatibility circuits with the objective to obtain one design with good process compensation for high efficiency mass production yields.