A New 2.3 kV Rated SiC MOSFET Module with Low-Inductance High-Power Package HPnC for 1500 VDC Applications
Conference: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/11/2024 - 06/13/2024 at Nürnberg, Germany
doi:10.30420/566262287
Proceedings: PCIM Europe 2024
Pages: 4Language: englishTyp: PDF
Authors:
Kawabata, J.; Chen, S.; Kodaira, Y.; Uchida, T.; Takaku, T.; Sekino, Y.; Kusunoki, Y.; Kobayashi, Y.; Ewald, S.
Abstract:
An optimum combination of the newly developed 2.3 kV rated SiC MOSFET and the high power package: High Power next Core (HPnC) is introduced in this paper. The 2.3 kV SiC MOSFET module is designed for 1500 VDC applications and its excellent characteristics enables 2-level topology instead of 3-level NPC topology for the systems. In addition, the newly developed HPnC package, featured low-inductive inside structure, is suitable for fast switching devices represented by SiC MOSFET, and maximizes its performance. The simulation result of power losses in a 1500 VDC inverter with the 2.3 kV SiC MOSFET HPnC modules was 38% smaller than that of a conventional 3-level NPC with 1.2 kV Si IGBT modules, and the total footprint of the power modules was reduced by 68%. This result indicates that the developed module can realize a cost-effective power converter for 1500 VDC applications.