Comparative Assessment of Overloadability Potential of 3.3 kV Si-IGBTs and SiC-MOSFET Power Modules

Abstract:
We present overload capability assessment of 3.3 kV (450 A) Si-IGBT and 3.3 kV (500 A) SiC-MOSFET based power modules for potential STATCOM application using chain-link MMC topology. Static tests were first performed for both Si and SiC power modules up to 250 °C. Double pulse dynamic tests have been performed at a supply voltage of 2.0 kV and up to 175 °C. Compared to Si, SiC MOSFETs present 7 – 10 x lower losses under overload condition and with higher overload factor and overload duration under nominal operating condition (i.e., V(DC) = 2000 V, f(sw) = 200 Hz).