New 2 kV SiC-MOS Technology for Application Fields in the Industrial Landscape
Conference: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/11/2024 - 06/13/2024 at Nürnberg, Germany
doi:10.30420/566262279
Proceedings: PCIM Europe 2024
Pages: 8Language: englishTyp: PDF
Authors:
Fuentes, Carlos D.; Kasko, Igor; Minode, Keigo; Yoshida, Ryo; Nakazawa, Seiya; Hoki, Tomonori; Thamm, Andreas; Felgemacher, Christian
Abstract:
A new 2 kV SiC-MOSFET based on ROHMs 4th generation trench cell has been developed to support the growing requirements of renewable energy applications driven by the photovoltaic sector. The longevity of solar panels, the search for higher efficiencies and the range of conditions that outdoor-mounted converters must withstand impose tough requirements on converter manufacturers and module makers alike, which in turn require semiconductor devices up to the task. Results show that this device presents excellent reliability and humidity robustness characteristics while portraying the low loss characteristics proper of ROHMs 4th gen trench technology, enabling simpler two-level topologies with 1500 V DC-Links.