Influence of Transfer Molding on the Reliability of DCM SiC Power Modules

Abstract:
Nowadays, SiC components are increasingly used in the design of power modules. The packaging of such semiconductors is challenging due to the higher Young’s modulus of SiC devices. The resulting forces are affecting the reliability of such modules which is usually lower than modules with Si technology. In the past, the introduction of Danfoss BondBuffer technology (DBB) and sinter layers have significantly increased the reliability of Si-based modules. The combination of a SiC device with DBB within molding compound in a DCM module has shown a full potential in its lifetime increment. For this work, active power cycle test on unmolded and molded SiC power modules have been performed and analyzed via simulation. The results from both experiment and simulation showed that the lifetime of molded SiC module is significantly increased compared to reference unmolded test samples.