Quantitative Performance Comparison of Large-Format SiC MOSFET and Si IGBT Modules
Conference: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/11/2024 - 06/13/2024 at Nürnberg, Germany
doi:10.30420/566262258
Proceedings: PCIM Europe 2024
Pages: 8Language: englishTyp: PDF
Authors:
Boutry, Arthur; Jimenez, Sergio; Lemmon, Andrew; Flack, Calvin
Abstract:
In this article, the most recent 1.7 kV SiC MOSFET and Si IGBT large-format modules (high current ratings, 900 to 1000 A) are compared, focusing on their dynamic characteristics. First, the losses and overvoltage characteristics are analyzed using the same Double-Pulse Test platform and the same external gate resistance. The limitations of this study are discussed, and a second comparison is proposed. This second comparison involves normalizing the total gate resistance of each module, including the internal gate resistance. This method leads to narrower differences between modules, although significant variation is still observed.