Innovative Gate Drive method TriC3(TM) for Motor

Abstract:
Innovative Gate Drive method TriC3(TM) that considers reverse recovery characteristic is devised. At timing when the reverse recovery characteristic has a significant impact to suppress output ringing, the gate current must be reduced. At other timing, the gate drive current can be increased to suppress heat generation. The result is reduced switching loss with suppressing EMI. Particularly it is useful for PWM motor driving on large current required. We have confirmed the heat suppression of Si MOSFET on actual device. This method shows 51% decreasing of heat effect compared to conventional method with suppressing EMI as well.