Reaching Beyond 1200 V: Lateral GaN HEMTs for High-Reliability EV and Industrial Applications
Conference: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/11/2024 - 06/13/2024 at Nürnberg, Germany
doi:10.30420/566262217
Proceedings: PCIM Europe 2024
Pages: 6Language: englishTyp: PDF
Authors:
Varadarajan, Kamal; Ankoudinov, Alexei; Yang, Robert; Kudymov, Alexey; Shankar, Bhawani; Karthick, Murukesan; Georgescu, Sorin; Rongavilla, John; Kang, Doug
Abstract:
The industry’s first, true 1250 V-rated lateral GaN HEMT allows significant transient overvoltage capability making it ideal for high-voltage, high-reliability EV and industrial applications. Based on the PowiGaN (TM) technology platform of Power Integrations, the 1250 V GaN cascode device shows stable off-state leakage beyond 2000 V with a typical breakdown voltage of 2300 V. Reliability qualification data is presented confirming the advantage of the 1250 V device for such applications. In this work, we have also demonstrated high-efficiency power supply operation at high-input voltages using a 1250 V flyback switcher IC, confirming its readiness for real-world use.