A Simulative Study of Measurement Errors During Double Pulse Testing of GaN Devices

Abstract:
The accuracy of double pulse tests of wide-bandgap semiconductor devices is a common issue. This is particularly true for Gallium Nitride devices, where non-ideal characteristics such as bandwidth limitations and parasitic elements of the probes can falsify the measurement of the switching loss. Although the individual sources of error are well known, there is little literature on their overall impact on the measurement accuracy. This study aims to improve the understanding of the interaction of the individual parameters and to derive recommendations. Statistical statements were derived using a simulative approach based on a design of experiments with over 15 000 setups. The results can assist future users in estimating the magnitude of unavoidable measurement errors.