Next Generation 4.5 kV IGBT-only StakPak Module with Reduced Losses and High Temperature Capability

Abstract:
This paper discusses Hitachi Energy’s most recent addition to its StakPak’s insulated gate bipolar transistor (IGBT) press-pack platform: the 4.5 kV / 2.5 kA Gen-1 IGBT-only StakPak module. This module uses our improved Gen-1 IGBT technology that has been optimized for losses. With a reduced V(CEsat) of 600 mV in comparison to its predecessor Gen-0 IGBT technology, current capability is boosted while keeping turn-off losses unaffected. Furthermore, the well demonstrated backside technology design of our Gen-1 IGBT has been proven to reduce collector-emitter leakage current by more than 50%, allowing for best in class high temperature capability T(vj) = 150 °C. Furthermore, at T(vj)=150 °C the device has been shown to have reverse bias safe operating area switching capability of I(C) > 2x I(nom) (V(CC) = 3.6 kV) on module level and short circuit pulse withstand time t(p)>18 mus (V(CC) = 3.6 kV) on submodule level. These characteristics make the Gen-1 based IGBT-only StakPak module highly competitive offering major potential for high voltage direct current transmission applications and Hitachi Energy seeks to bring the technologies advantages to current ratings as high as 5 kA.